Mo-Cu Alloy For IGBT Packaging
An insulated gate bipolar transistor (IGBT) is one of the many types of semiconductors, widely used in applications such as industrial automation, new energy vehicles, rail transit, smart grid, and, of course, power electronics. Due to its effectiveness, fast switching characteristics, and high withstandable voltages, its use in such applications is quite important. Still, as there is generated during operation, heat dissipation and a stable structure are important to foster the IGBT's reliability. That said, there are also stable structures required to safely assemble the IGBT.
Mo-Cu alloys also play a major part in the IGBT's packaging. The alloys, having all the positive attributes: high thermal conductivity, good thermal expansion, and excellent mechanical characteristics of the materials, enhance the thermal substrates, heat sinks, and lead frames of the IGBT assemblies.
Molybdenum-Copper Alloy Parameter Description
| Grade | Element(wt%) | Density | Coefficient of Thermal Expansion | Thermal Conductivity | |
| Cu | Mo | g/cm3 | 10-6/K | W/M·K | |
| Mo90Cu10 | 10±1 | Balance | 10 | 5.6 | 150-160 |
| Mo85Cu15 | 15±1 | Balance | 9.93 | 6.8 | 160-180 |
| Mo80Cu20 | 20±1 | Balance | 9.9 | 7.7 | 170-190 |
| Mo70Cu30 | 30±1 | Balance | 9.8 | 8.1 | 180-200 |
| Mo60Cu40 | 40±1 | Balance | 9.66 | 10.3 | 210-250 |
| Mo50Cu50 | 50±1 | Balance | 9.54 | 11.5 | 230-270 |
| Mo40Cu60 | 40 ±0.2 | Balance | 9.42 | 11.8 | 280 – 290 |
