Copper-tungsten Alloy Sputtering Target

Targets for copper-tungsten alloy sputtering begin with the mixing and hot-pressing of copper and tungsten in designated proportions. Other methods include vacuum induction melting, mechanical ball milling, and hot isostatic pressing. Compared with single metal targets, alloyed sputtering targets offer greater versatility and improved tapering in durability, thermal conductivity, and chemical stability. This added versatility is helpful for precision machining and for making multilayer films. In addition, the electric conductivity of copper-tungsten alloys and other related properties can be adjusted and tailored for particular uses, within certain alloying limits and configurable process parameters. In physical vapor deposition, copper-tungsten alloys are used in magnetron sputtering and electron beam evaporation to fabricate thin films of different metals, alloys, nitrides, and oxides. Other uses for copper-tungsten alloy sputtering targets include microelectronic devices, the production of optical thin films, and materials for solar energy conversion.

Common Composition of Copper-tungsten Alloy Sputtering Target

Composition wt. %

Density g/cm3

Hardness

HB Kgf/mm2

Resistivity

micro Ome*cm

IACS%

Bending strengthMpa

W50/Cu50

11.85

115

3.2

54

-

W55/Cu45

12.3

125

3.5

49

-

W60/Cu40

12.75

140

3.7

47

-

W65/Cu35

13.3

155

3.9

44

-

W70/Cu30

13.8

175

4.1

42

790

W75/Cu25

14.5

195

4.5

38

885

W80/Cu20

15.15

220

5

34

980

W85/Cu15

15.9

240

5.7

30

1080

W90/Cu10

16.75

260

6.5

27

1160

Copper-tungsten Alloy Sputtering Target

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