Copper-tungsten Alloy Sputtering Target
Targets for copper-tungsten alloy sputtering begin with the mixing and hot-pressing of copper and tungsten in designated proportions. Other methods include vacuum induction melting, mechanical ball milling, and hot isostatic pressing. Compared with single metal targets, alloyed sputtering targets offer greater versatility and improved tapering in durability, thermal conductivity, and chemical stability. This added versatility is helpful for precision machining and for making multilayer films. In addition, the electric conductivity of copper-tungsten alloys and other related properties can be adjusted and tailored for particular uses, within certain alloying limits and configurable process parameters. In physical vapor deposition, copper-tungsten alloys are used in magnetron sputtering and electron beam evaporation to fabricate thin films of different metals, alloys, nitrides, and oxides. Other uses for copper-tungsten alloy sputtering targets include microelectronic devices, the production of optical thin films, and materials for solar energy conversion.
Common Composition of Copper-tungsten Alloy Sputtering Target
Composition wt. % | Density g/cm3 | Hardness HB Kgf/mm2 | Resistivity micro Ome*cm | IACS% | Bending strengthMpa |
W50/Cu50 | 11.85 | 115 | 3.2 | 54 | - |
W55/Cu45 | 12.3 | 125 | 3.5 | 49 | - |
W60/Cu40 | 12.75 | 140 | 3.7 | 47 | - |
W65/Cu35 | 13.3 | 155 | 3.9 | 44 | - |
W70/Cu30 | 13.8 | 175 | 4.1 | 42 | 790 |
W75/Cu25 | 14.5 | 195 | 4.5 | 38 | 885 |
W80/Cu20 | 15.15 | 220 | 5 | 34 | 980 |
W85/Cu15 | 15.9 | 240 | 5.7 | 30 | 1080 |
W90/Cu10 | 16.75 | 260 | 6.5 | 27 | 1160 |
